IEEE

First Demonstration of Double-Gate IGZO Transistors with Ideal Subthreshold Swing of 60 mV/dec at Room Temperature and 76 mV/dec at 380 K Over 5 Decades and gm Exceeding 1 mS ...

Abstract: In this work, contacted length scaling for atomic-layer-deposited IGZO transistors has been systematically investigated. The back-gate IGZO transistors with excellent reliability under high ...
IEEE

Enabling Efficient Pure-NMOS Circuits Through Adiabatic Complementary Pass-Transistor Logic

Abstract: For many emerging computing technologies, such as wearable and flexible IoT devices, power and energy consumption may be of far greater importance than performance and operating frequency.