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Abstract: A new RF switch architecture with ultrahigh isolation and possible gain is proposed, analyzed, and demonstrated using 0.18-μm BiCMOS technology. The new RF switch architecture achieves an ...
Abstract: This letter introduces an asymmetric single-pole double-throw (SPDT) switch designed using the gallium arsenide pseudomorphic high-electron mobility transistor (GaAs pHEMT) process for sub-6 ...
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