Abstract: A 2-mercaptobutanedioic acid modified enhancement-mode AlGaN/GaN high-electron-mobility transistor (HEMT) device with a 5-fold gate was proposed for Fe3+ specific detection. The crystal ...
Abstract: This study presents a novel approach to designing a ternary inverter utilizing a negative transconductance (NTC) behavior field-effect transistor (FET) with pull-down switching. The NTC FET ...
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