Abstract: The asymmetry of parasitic inductance in the parallel branches of SiC MOSFET power modules is the main reason for the unbalance in dynamic current sharing. Existing parasitic inductance ...
Vishay Intertechnology, Inc. has introduced two new 1200V MOSFET power modules designed to increase efficiency and reliability for medium- to high-frequency applications in automotive, energy, ...
MALVERN, Pa. - Vishay Intertechnology, Inc. (NYSE:VSH), a $1.92 billion market cap electronic components manufacturer, has released two new 1200 V silicon carbide (SiC) MOSFET power modules designed ...
Abstract: The use of silicon carbide (SiC) MOSFET power modules offers benefits such as rapid switching, excellent thermal conductivity, and minimal losses, supporting the advancement of ...
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