For decades, chipmakers have squeezed more computing power out of silicon by shrinking transistors, but that strategy is ...

Shrinking silicon transistors have reached their physical limits, but a team from the University of Tokyo is rewriting the rules. They've created a cutting-edge transistor using gallium-doped indium ...

Nanoscale 3D transistors made from ultrathin semiconductor materials can operate more efficiently than silicon-based devices, leveraging quantum mechanical properties to potentially enable ...

Kioxia says it has developed highly stackable oxide-semiconductor channel transistors capable of supporting high-density 3D ...

For decades, the semiconductor industry has been laser-focused on shrinking silicon transistors, but Peking University researchers believe the future might lie in changing materials entirely. In a ...

The growing energy use of AI has gotten a lot of people working on ways to make it less power hungry. One option is to develop processors that are a better match to the sort of computational needs of ...

Shrinking computers, faster phones, and smarter gadgets all rely on one tiny component: the transistor. Invented in the 20th century, it’s what powers nearly every modern electronic device.

Associate Professor Mario Lanza and his team demonstrated a groundbreaking silicon transistor that mimics neural and synaptic behaviours, marking a significant breakthrough in neuromorphic computing.

If the claim is accurate, it would mean that China has bleeding-edge tech that could rival chips from Intel and TSMC. Share on Facebook (opens in a new window) Share on X (opens in a new window) Share ...

Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) represent a critical advancement in semiconductor technology, integrating a silicon base with germanium to markedly enhance frequency ...

A new kind of computer processors has been developed by integrating atomically thin non-silicon transistors on to single chips 1. A transistor acts as a switch and controls the flow of charge ...

What just happened? A team of researchers at MIT, in collaboration with Georgia Tech and the Air Force Research Laboratory, has developed a new method for integrating gallium nitride (GaN) transistors ...