A transistor fabricated from the crystalline phase of an organic semiconductor material could provide a path to improved switching speeds — rivalling those of devices built from inorganic materials ...

the scaling of silicon-based metal-oxide-semiconductor field-effect transistors (Si MOSFETs) and evolution of novel structure transistors in accordance with Moore’s Law, especially for modern ...

What is a P-N Junction? A p-n junction is a fundamental building block of modern electronics, formed by joining together two types of semiconductor materials: p-type (positive) and n-type (negative).

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IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...

On Oct. 3, 1950, three scientists at Bell Labs in New Jersey received a U.S. patent for what would become one of the most important inventions of the 20th century — the transistor. John Bardeen, ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has expanded its line-up of N-channel power MOSFETs fabricated with the latest-generation process [1], ...