“With BVceo up to 100V, continuous current to 10A – and 20A peak – and saturation voltage as low as 17mV, these transistors ...
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Diodes broadens automotive transistor range with new devices
US-based semiconductor manufacturer Diodes has added new automotive-grade bipolar transistor series, DXTN/P 78Q and DXTN/P ...
The ISL73096EH is a radiation hardened ultra high frequency NPN/PNP transistor array. It contains three NPN transistors and two PNP transistors on a common substrate. The device covers all of the ...
In the early days, PNP bipolar transistors were common, but the bulk of circuits you see today use NPN transistors. As [Aaron Danner] points out, many people think PNP transistors are “backward” but ...
Diodes Incorporated (Diodes) (Nasdaq: DIOD) today announces an expansion of its automotive-compliant* bipolar transistor portfolio with the introduction of the DXTN/P 78Q & 80Q series. These ultra-low ...
This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...
The first transistor was successfully demonstrated at Bell Laboratories in Murray Hill, New Jersey, in 1947. This three-terminal device has spawned many of the electronics devices that make possible ...
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