The BSM120D12P2C005 is a half bridge power module consisting of SiC-DMOSFETs and SiC-SBDs from ROHM. With a drain-source voltage of 1200 V and drain current of 120 A, the device has a maximum total ...
Texas Instruments has developed a complete power stage comprising a driver and two GaN FETs into a half-bridge configuration. The power stage is housed in a QFN package and is optimized for ...
The CAS300M17BM2 is the industry’s first all-SiC 1.7-kV power module that is available in an industry standard 62-mm housing. The half-bridge module exhibits an 8 mΩ on-resistance and is capable of ...
EL SEGUNDO, Calif.--(BUSINESS WIRE)--Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s ...
SemiQ Inc, a developer of SiC solutions, has announced an expansion of its third-generation QSiC MOSFET product line, ...
Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ on-resistance and is encased in a standard 62-mm housing. Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ ...
SemiQ has put 1,200V silicon carbide mosfet and Schottky diode half-bridges into standard ’62mm’ industrial power modules. There are four parts, each measuring 62 x 106.5 x 17mm (plus terminals): two ...
Development engineers working on the design of cost-efficient power electronic converters used in electrical drives, UPSs, welding machines or inductive heating systems depend on reliable and robust ...
SemiQ has unveiled a family of 1700 V SiC MOSFETs that have been designed to meet the needs of medium-voltage high power conversion applications. QSiC 1700 V series of SiC MOSFETs Credit: SemiQ ...
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